
Zero-Drift, Single-Supply, Rail-to-Rail Input/Output Operational Amplifiers
AD8552
This family of amplifiers has ultralow offset, drift, and bias current. The AD8551, AD8552, and AD8554 are single, dual, and quad amplifiers featuring rail-to-rail input and output swings. All are guaranteed to operate from 2.7 V to 5 V with a single supply. The AD8551/AD8552/AD8554 provide the benefits previously found only in expensive auto-zeroing or chopper-stabilized amplifiers. Using Analog Devices, Inc. topology, these new zero-drift amplifiers combine low cost with high accuracy. No external capacitors are required. With an offset voltage of only 1 μV and drift of 0.005 μV/°C, the AD8551/AD8552/AD8554 are perfectly suited for applications in which error sources cannot be tolerated. Temperature, position and pressure sensors, medical equipment, and strain gage amplifiers benefit greatly from nearly zero drift over their operating temperature range. The rail-to-rail input and output swings provided by the AD8551/AD8552/AD8554 make both high-side and low-side sensing easy. The AD8551/AD8552/AD8554 are specified for the extended industrial/automotive temperature range (−40°C to +125°C). The AD8551 single amplifier is available in 8-lead MSOP and 8-lead narrow SOIC packages. The AD8552 dual amplifier is available in 8-lead narrow SOIC and 8-lead TSSOP surfacemount packages. The AD8554 quad is available in 14-lead narrow SOIC and 14-lead TSSOP packages.
Evaluation report, including
- the "ESTIMATED" process technology,
- die size,
- the "ESTIMATED" number of poly and metal layers
- Die photos with low resolution
Evaluation only, the work scope of high-resolution chip imaging area and circuit analysis is opened to discussion
- If you decide to perform a circuit analysis, we will provide a complete delivery. including BrigenOne, EDIF format schematics, and PDF file
- The project is still in the "evaluation" phase, and the work scope is open to discussing.
- The information we provide about this project will be somewhat uncertain, as we have not yet performed high-resolution wafer images of each layer.

